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Proceedings Paper

Comparison of I-line and deep-UV technologies for 0.35-um lithography
Author(s): Kevin J. Orvek; Joseph J. Ferrari; Sasha K. Dass; Daniel A. Corliss; James R. Buchanan; MaryAnn Piasecki
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Paper Abstract

An experimental comparison of i-line lithography and deep-UV lithography was performed for 0.35 micrometers patterning of isolation level, polysilicon level, and the contact level. Both techniques used standard illumination and standard masks. The i-line process used conventional single level DNQ resists. The deep-UV work used a commercially available single level chemically amplified positive resist, with additional use of bottom-layer organic anti-reflective layers on some levels. The results highlighted the problems of pushing i-line lithography to the 0.35 micrometers regime and demonstrated the manufacturable process latitudes available with deep-UV lithography.

Paper Details

Date Published: 17 May 1994
PDF: 12 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175433
Show Author Affiliations
Kevin J. Orvek, Digital Equipment Corp. (United States)
Joseph J. Ferrari, Digital Equipment Corp. (United States)
Sasha K. Dass, Digital Equipment Corp. (United States)
Daniel A. Corliss, Digital Equipment Corp. (United States)
James R. Buchanan, Digital Equipment Corp. (United States)
MaryAnn Piasecki, Digital Equipment Corp. (United States)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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