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Proceedings Paper

Comparative study on optical proximity effect correction with various types of dummy patterns and its application to DRAM devices
Author(s): Chang-Jin Sohn; Woo-Sung Han; Hoyoung Kang; Young-Bum Koh; Moon-Yong Lee
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Paper Abstract

Because lithographic patterns' quality is functions of quality of aerial image, resist behavior, substrate conditions, topography, etc., pattern quality can be significantly improved if all of those factors are improved simultaneously. In this paper we propose a method called fidelity enhancement with extremely small dummy lines (FEED) to correct optical proximity affect by adding dummy patterns well below the stepper's resolution limit, and show how much aerial image quality improvement and process latitude are possible with this method. Various sized dummy lines were deployed in horizontal, vertical, and both directions in conjunction with different numerical aperture (NAs) of i-line steppers for the characterization of the FEED. Dummy lines with sizes ranging from 0.1 micrometers to 0.18 micrometers turned out to be useful for our 64 mega bit DRAM's storage node patterns. FEED showed possibilities to be utilized in any device patterns which inevitably have patterns susceptible to optical proximity effect.

Paper Details

Date Published: 17 May 1994
PDF: 9 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175427
Show Author Affiliations
Chang-Jin Sohn, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Hoyoung Kang, Samsung Electronics Co., Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co., Ltd. (South Korea)
Moon-Yong Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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