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Proceedings Paper

Automated optical proximity correction: a rules-based approach
Author(s): Oberdan W. Otto; Joseph G. Garofalo; K. K. Low; Chi-Min Yuan; Richard C. Henderson; Christophe Pierrat; Robert L. Kostelak; Sheila Vaidya; P. K. Vasudev
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Paper Abstract

In this work we demonstrate the power, speed, and effectiveness of an automated rules-based approach for performing optical proximity correction. The approach applies to both conventional and phase-shifting mask layouts for optical lithography. Complex imaging, substrate, and process phenomena can be folded into comparatively few rules parameters. Using simple arithmetic, these parameters pre-compensate the layout for the combined proximity effects. The rules consist of edge rules and corner rules for biasing feature edges and for adding sub-resolution assist features. This paper describes an integrated solution that includes rules parameter generation and fast, hierarchical rules application. Experimental results demonstrate improved edge placements and wider process latitude than for non- corrected layouts.

Paper Details

Date Published: 17 May 1994
PDF: 16 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175422
Show Author Affiliations
Oberdan W. Otto, Trans Vector Technologies Inc. (United States)
Joseph G. Garofalo, AT&T Bell Labs. (United States)
K. K. Low, SEMATECH (United States)
Chi-Min Yuan, SEMATECH (United States)
Richard C. Henderson, Trans Vector Technologies Inc. (United States)
Christophe Pierrat, AT&T Bell Labs. (United States)
Robert L. Kostelak, AT&T Bell Labs. (United States)
Sheila Vaidya, AT&T Bell Labs. (United States)
P. K. Vasudev, SEMATECH (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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