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Proceedings Paper

Exposure of a halftone mask by conventional and off-axis illumination
Author(s): Hye-Keun Oh; Jung-Woung Goo; Sug-Soon Yim; Tak-Hyun Yoon; Seung-Wook Park; Byoung Sub Nam; Hoyoung Kang; Cheol-Hong Kim; Woo-Sung Han
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Paper Abstract

The halftone mask, also called the attenuated phase shifting mask, is assumed to be a preferred candidate among many types of masks since it can be applied to all feature types and it is relatively easy to fabricate. We studied the process latitude of the halftone mask with normal illumination and the combination of the halftone mask with off-axis illumination by computer simulation, the fabrication of the halftone mask, and exposure with an i-line stepper. The greatest improvement of process latitude can be achieved for contact hole pattern when the halftone mask is used. The isolated space and the isolated line pattern show minimal gain by the halftone mask or the off-axis illumination, but the line/space pattern can be made by the off-axis illumination. The process latitude can be enlarged by the proper mask bias and the aspect ratio.

Paper Details

Date Published: 17 May 1994
PDF: 12 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175421
Show Author Affiliations
Hye-Keun Oh, Hanyang Univ. (South Korea)
Jung-Woung Goo, Hanyang Univ. (South Korea)
Sug-Soon Yim, Hanyang Univ. (South Korea)
Tak-Hyun Yoon, Hanyang Univ. (South Korea)
Seung-Wook Park, Hanyang Univ. (South Korea)
Byoung Sub Nam, Hanyang Univ. (South Korea)
Hoyoung Kang, Samsung Electronics Co., Ltd. (South Korea)
Cheol-Hong Kim, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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