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Proceedings Paper

Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology
Author(s): Minoru Sugawara; Hiroichi Kawahira; Keisuke Tsudaka; Akihiro Ogura; Satoru Nozawa; Fumikatsu Uesawa; Hideo Shimizu
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Paper Abstract

The performance and practical fabrication latitude of attenuated phase shifting masks have been studied using a newly developed exposure-defocus and mask fabrication latitude (EDM) methodology in which the mask linewidth latitude is taken into account as well as the conventional estimation parameters such as the exposure latitude and depth of focus (DOF). Both isolated and dense 0.3 micrometers contact hole (C/H) patterns have been evaluated using an EDM process window which is obtained by the light intensity profiles with the KrF 248 nm exposure, NA equals 0.45 and (sigma) equals 0.3. When the practical process latitude of within +/- 5% of exposure dose and +/- 0.01 micrometers of mask linewidth are supposed, background transmittances of more than 9.00% and phase error controllability within +/- 2 degrees are required for both isolated and dense C/H patterns. The EDM window is steeply shrunk by the enhanced optical proximity effect for the dense C/H pattern at a pitch of less than 0.90 micrometers .

Paper Details

Date Published: 17 May 1994
PDF: 12 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175416
Show Author Affiliations
Minoru Sugawara, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)
Keisuke Tsudaka, Sony Corp. (Japan)
Akihiro Ogura, Sony Corp. (Japan)
Satoru Nozawa, Sony Corp. (Japan)
Fumikatsu Uesawa, Sony Corp. (Japan)
Hideo Shimizu, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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