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Proceedings Paper

Fabrication of phase-shifting masks employing multilayer films
Author(s): T. C. Chieu; Kwang Kuo Shih; Derek B. Dove
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Paper Abstract

The design and fabrication of phase shifting masks using multi-layer films are summarized. Mask blanks consist of fused silica substrates coated with a top chrome layer, an SiO2 phase layer, and an etch-stop layer. The layer thicknesses are designed to give a (pi) -phase shift at 248 nm (or at 365 nm), and equal and maximal transmission at etched and non-etched regions. The chrome layer is patterned by e-beam resist and is etched by reactive ion etching (RIE) with Cl2 chemistry. The SiO2 layer is patterned by another e-beam resist in registration with first chrome pattern and is etched by RIE with CHF3 chemistry. Two materials were investigated as the etch stop layer, namely Al2O3 and HfO2, with the latter having advantageous properties. It is shown that a 20% processing window is achieved in this type of PSM for a 5 degree phase accuracy as in contrast to quartz etched PSM in which the etched depth and uniformity has to be controlled to within 2.5% for a similar phase accuracy.

Paper Details

Date Published: 17 May 1994
PDF: 13 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175412
Show Author Affiliations
T. C. Chieu, IBM Research Div. (United States)
Kwang Kuo Shih, IBM Research Div. (United States)
Derek B. Dove, IBM Research Div. (United States)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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