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Proceedings Paper

Combination of transmission and absorption mask for 0.3-um lithography
Author(s): Lothar Bauch; Joachim J. Bauer; Monika Boettcher; Ulrich A. Jagdhold; Ulrich Haak; Walter Spiess
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Paper Abstract

High resolution is achieved by a transmission mask. Distortions at the end of structures are eliminated by application of an absorption pattern (chrome). Structures of a line width larger than 0.8 micrometers are produced by the chrome part of the mask, smaller structures by the transmission level. The performance of this kind of mask is demonstrated by SEM micrographs.

Paper Details

Date Published: 17 May 1994
PDF: 8 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175409
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Joachim J. Bauer, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Ulrich Haak, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Walter Spiess, Hoechst AG (Germany)


Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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