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Proceedings Paper

Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film
Author(s): Masayuki Nakajima; Nobuyuki Yoshioka; Junji Miyazaki; Haruhiko Kusunose; Kunihiro Hosono; Hiroaki Morimoto; Wataru Wakamiya; Keiichi Murayama; Yaichiro Watakabe; Katsuhiro Tsukamoto
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Paper Abstract

Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO or MoSiON films has been developed. The optical parameter of these films can be controlled by the condition of sputtering deposition. These films satisfy the shifter requirements, both the 180-degrees phase shift and the transmittance between 5 and 20% for i-line. MoSiO and MoSiON films also satisfy the requirement for KrF excimer laser light. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the mask fabrication. Defect-free masks for hole layers of 64 M-bit DRAM are obtained. Using this mask, the focus depth of 0.35-micrometers hole is improved from 0.6 micrometers to 1.5 micrometers for i-line lithography. The printing of 0.2-micrometers hole patterns is achieved by the combination of this mask and KrF excimer laser lithography.

Paper Details

Date Published: 17 May 1994
PDF: 11 pages
Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175405
Show Author Affiliations
Masayuki Nakajima, Mitsubishi Electric Corp. (Japan)
Nobuyuki Yoshioka, Mitsubishi Electric Corp. (Japan)
Junji Miyazaki, Mitsubishi Electric Corp. (Japan)
Haruhiko Kusunose, Mitsubishi Electric Corp. (Japan)
Kunihiro Hosono, Mitsubishi Electric Corp. (Japan)
Hiroaki Morimoto, Mitsubishi Electric Corp. (Japan)
Wataru Wakamiya, Mitsubishi Electric Corp. (Japan)
Keiichi Murayama, Mitsubishi Electric Corp. (Japan)
Yaichiro Watakabe, Mitsubishi Electric Corp. (Japan)
Katsuhiro Tsukamoto, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 2197:
Optical/Laser Microlithography VII
Timothy A. Brunner, Editor(s)

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