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Proceedings Paper

Photoresist thermal stability measurements using laser scatterometry
Author(s): Robert A. Norwood; Douglas P. Holcomb; Chet J. Sobodacha; Thomas J. Lynch
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Paper Abstract

Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

Paper Details

Date Published: 16 May 1994
PDF: 9 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175389
Show Author Affiliations
Robert A. Norwood, Hoechst Celanese Corp. (United States)
Douglas P. Holcomb, Hoechst Celanese Corp. (United States)
Chet J. Sobodacha, Hoechst Celanese Corp. (United States)
Thomas J. Lynch, Hoechst Celanese Corp. (United States)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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