Proceedings Paper
Advanced positive photoresists for practical deep-UV lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
New positive tone deep UV resists with enhanced post-exposure delay (PED) latitude and process latitude are presented. Additives and functionalized sulfone terpolymers are tailored to optimize the dissolution properties and process stability. Adjustment of the dissolution rate is used as a design criterion for optimizing the resist performance. RX 165 resist, optimized using the above criteria, exhibits 0.25 micron line/space resolution, 0.8 micrometers focus latitude at 0.275 micrometers resolution, and 1 hour post exposure delay latitude.
Paper Details
Date Published: 16 May 1994
PDF: 14 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175381
Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)
PDF: 14 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175381
Show Author Affiliations
Norbert Muenzel, OCG Microelectronic Materials AG (Switzerland)
Heinz E. Holzwarth, OCG Microelectronic Materials AG (Switzerland)
Pasquale A. Falcigno, OCG Microelectronic Materials AG (Switzerland)
Hans-Thomas Schacht, OCG Microelectronic Materials AG (Switzerland)
Reinhard Schulz, OCG Microelectronic Materials AG (Switzerland)
Omkaram Nalamasu, AT&T Bell Labs. (United States)
Allen G. Timko, AT&T Bell Labs. (United States)
Elsa Reichmanis, AT&T Bell Labs. (United States)
Heinz E. Holzwarth, OCG Microelectronic Materials AG (Switzerland)
Pasquale A. Falcigno, OCG Microelectronic Materials AG (Switzerland)
Hans-Thomas Schacht, OCG Microelectronic Materials AG (Switzerland)
Reinhard Schulz, OCG Microelectronic Materials AG (Switzerland)
Omkaram Nalamasu, AT&T Bell Labs. (United States)
Allen G. Timko, AT&T Bell Labs. (United States)
Elsa Reichmanis, AT&T Bell Labs. (United States)
Janet M. Kometani, AT&T Bell Labs. (United States)
Douglas R. Stone, AT&T Bell Labs. (United States)
Thomas X. Neenan, AT&T Bell Labs. (United States)
Edwin A. Chandross, AT&T Bell Labs. (United States)
Sydney G. Slater, OCG Microelectronic Materials, Inc. (United States)
M. D. Frey, OCG Microelectronic Materials, Inc. (United States)
Andrew J. Blakeney, OCG Microelectronic Materials, Inc. (United States)
Douglas R. Stone, AT&T Bell Labs. (United States)
Thomas X. Neenan, AT&T Bell Labs. (United States)
Edwin A. Chandross, AT&T Bell Labs. (United States)
Sydney G. Slater, OCG Microelectronic Materials, Inc. (United States)
M. D. Frey, OCG Microelectronic Materials, Inc. (United States)
Andrew J. Blakeney, OCG Microelectronic Materials, Inc. (United States)
Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)
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