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Proceedings Paper

I-line negative resist manufacturing process qualification
Author(s): Erik A. Puttlitz; James P. Collins
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Paper Abstract

A new chemically amplified I-line negative resist (INR) is in use at IBM's eight-inch wafer manufacturing facility in Essex Junction, Vermont. The resist is applied at the ion implant block photo levels for 4-Mb DRAM chip production and shows very good line performance and stability. Process parameters such as focus, exposure dose, post expose bake (PEB) temperature vs. photospeed, and time window from expose to PEB, demonstrate above average latitude. Due to the long develop times (4 min per wafer) required when using a single-wafer spray or puddle develop in an integrated photocluster, INR runs on a stand-alone toolset. This paper reviews several concerns with INR regarding its optical appearance, resist thinning, and undercut. The first two issues were resolved through increased manufacturing-floor training and by more tightly controlling certain components of the resist. The undercut effect required a more advanced version of the resist to be formulated, which is currently under evaluation.

Paper Details

Date Published: 16 May 1994
PDF: 8 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175377
Show Author Affiliations
Erik A. Puttlitz, IBM Microelectronics (United States)
James P. Collins, IBM Microelectronics (United States)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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