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Proceedings Paper

Reliability of photospeed and related measures of resist performances
Author(s): Karin R. Schlicht; Patricia Scialdone; Peggy M. Spragg; Steven G. Hansen; Rodney J. Hurditch; Medhat A. Toukhy; David J. Brzozowy
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Paper Abstract

Photospeed measures of functional performance are widely employed for the characterization, quality control, and quality assurance of photoresists in both their manufacture and end use. In this paper we investigate from both a theoretical and experimental stand point, the precision and reliability of these measures for positive photoresists, and explore the relationships with dissolution rate behavior as determined by DRM. In particular we quantify their dependence upon photolithographic process and resist compositional variants. It is demonstrated that for a given photoresist a 'single point' measure of photospeed may not be predictive of the observed lithographic 'sizing' behavior. Multiple point measurements, which more reliably predict the lithographic process window, are proposed and evaluated for advanced g- and i-line resists. Included amongst these are measures based on the determination of E0 at different develop times.

Paper Details

Date Published: 16 May 1994
PDF: 16 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175375
Show Author Affiliations
Karin R. Schlicht, OCG Microelectronic Materials, Inc. (United States)
Patricia Scialdone, OCG Microelectronic Materials, Inc. (United States)
Peggy M. Spragg, OCG Microelectronic Materials, Inc. (United States)
Steven G. Hansen, OCG Microelectronic Materials, Inc. (United States)
Rodney J. Hurditch, OCG Microelectronic Materials, Inc. (United States)
Medhat A. Toukhy, OCG Microelectronic Materials, Inc. (United States)
David J. Brzozowy, OCG Microelectronic Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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