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Proceedings Paper

Evaluation of a bilayer resist system based on a zirconium-containing polymer
Author(s): Ferdinand Rodriguez; Ashwin S. Ramachandran
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Paper Abstract

In the present work, the bilayer system investigated was comprised of a negative working portable conformable mask (PCM) and an underlying planarizing layer. The lithographic evaluation of the PCM as a stand-alone single-layer resist (SLR) was presented in an earlier paper. The DPEPA acts as a sensitizer to e-beam radiation by enhancing exposure-induced crosslinking. The presence of Zr in the form of an organometallic in the PCM results in the formation of an oxide-based barrier to etch in oxygen and CF4/02 plasmas. The PCM in the bilayer system was found to have improved contrast (approximately 0.7-3.0) relative to the SLR, though it was also less sensitive (sensitivity in the range of 1.5-15 (mu) C/cm2). Features of 0.5 micron were delineable with this resist scheme, using acetic acid as a developer. Increasing the DPEPA improved sensitivity but resulted in a deterioration of contrast. The bilayer resist etch rates during RIE were studied in a parallel plate etcher as a function of power density, chamber pressure, etchant gas flow rate and mole% CF4 in the plasma. For the system described here and under identical etching conditions, the bilayer etched 1/12 as fast as pure PMMA in oxygen and at 80 nm/min (versus 214 nm/min for PMMA) in a 92:8 CF4/02 plasma. The presence of the PCM afforded the PMMA resist more RIE time, the upper limit of etch duration increasing with increased planarizer thickness. Post-etch scanning electron micrographs indicate that the imaged stencils are dimensionally stable to prolonged etches in these environments.

Paper Details

Date Published: 16 May 1994
PDF: 7 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175362
Show Author Affiliations
Ferdinand Rodriguez, Cornell Univ. (United States)
Ashwin S. Ramachandran, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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