Share Email Print
cover

Proceedings Paper

Evaluation of a bilayer resist system based on a zirconium-containing polymer
Author(s): Ferdinand Rodriguez; Ashwin S. Ramachandran
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In the present work, the bilayer system investigated was comprised of a negative working portable conformable mask (PCM) and an underlying planarizing layer. The lithographic evaluation of the PCM as a stand-alone single-layer resist (SLR) was presented in an earlier paper. The DPEPA acts as a sensitizer to e-beam radiation by enhancing exposure-induced crosslinking. The presence of Zr in the form of an organometallic in the PCM results in the formation of an oxide-based barrier to etch in oxygen and CF4/02 plasmas. The PCM in the bilayer system was found to have improved contrast (approximately 0.7-3.0) relative to the SLR, though it was also less sensitive (sensitivity in the range of 1.5-15 (mu) C/cm2). Features of 0.5 micron were delineable with this resist scheme, using acetic acid as a developer. Increasing the DPEPA improved sensitivity but resulted in a deterioration of contrast. The bilayer resist etch rates during RIE were studied in a parallel plate etcher as a function of power density, chamber pressure, etchant gas flow rate and mole% CF4 in the plasma. For the system described here and under identical etching conditions, the bilayer etched 1/12 as fast as pure PMMA in oxygen and at 80 nm/min (versus 214 nm/min for PMMA) in a 92:8 CF4/02 plasma. The presence of the PCM afforded the PMMA resist more RIE time, the upper limit of etch duration increasing with increased planarizer thickness. Post-etch scanning electron micrographs indicate that the imaged stencils are dimensionally stable to prolonged etches in these environments.

Paper Details

Date Published: 16 May 1994
PDF: 7 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175362
Show Author Affiliations
Ferdinand Rodriguez, Cornell Univ. (United States)
Ashwin S. Ramachandran, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

© SPIE. Terms of Use
Back to Top