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Proceedings Paper

Novel spacer technique by silylation: experiment and simulation
Author(s): Ulrich A. Jagdhold; Lothar Bauch; A. Wolff; Joachim J. Bauer
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Paper Abstract

A new advanced process scheme is presented using a self aligned sidewall oxide film formation. The process technique was evaluated with simulation methods. During the experiments a new effect, the selective silylation, was found.

Paper Details

Date Published: 16 May 1994
PDF: 5 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175361
Show Author Affiliations
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik GmbH (Germany)
Lothar Bauch, Institut fuer Halbleiterphysik GmbH (Germany)
A. Wolff, Institut fuer Halbleiterphysik GmbH (Germany)
Joachim J. Bauer, Institut fuer Halbleiterphysik GmbH (Germany)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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