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Proceedings Paper

Materials evaluation of antireflective coatings for single-layer 193-nm lithography
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Paper Abstract

A survey of optical constants for a variety of materials measured at 193 nm suggests that antireflection measures will be necessary for single-layer resist lithography at 193 nm. The extent to which standing waves occur in 193- nm resists is similar in magnitude to those occurring at 248 nm. To help reduce these effects, a new spin-on antireflective layer has been developed. It is composed of a polymeric dye in a phase-compatible blend with a transparent base polymer, can be thermally cured to render it insoluble, and is compatible with chemically amplified resists. In addition to this spin-on material, extension of existing 248-nm dry-deposited antireflective layers to 193 nm should allow for either spin-on or dry-deposited antireflection coatings for 193-nm lithography.

Paper Details

Date Published: 16 May 1994
PDF: 14 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175358
Show Author Affiliations
Roderick R. Kunz, MIT/Lincoln Lab. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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