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Proceedings Paper

Characterization of the quarter-micron i-line lithography using a top surface imaging process
Author(s): Seung-Chan Moon; Hyeong-Soo Kim; Chang-Moon Lim; Tai-Kyung Won; Soo-Han Choi
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Paper Abstract

The practical limits of i-line top surface imaging process using a novolak based photoresist were investigated dependent on exposure techniques such as conventional and off-axis illumination. Ultimately, quarter micron small geometry was clearly delineated and depth of focus (DOF) latitude of 1.5micrometers and 2.7micrometers was achieved respectively for 0.25micrometers and 0.30micrometers lines and spaces pattern by annular illumination of 0.50NA. To compensate proximity effect caused by pattern density, sub-resolution auxiliary pattern was firstly optimized for off- axis illumination of quadrapole and annular. As a result, critical dimension (CD) difference between dense and isolated pattern in 0.30micrometers reduced to half-level compared to that of non-auxiliary pattern. It was found that desilylation phenomenon was critically affected by the kind of photopolymer reacted with silicon source and molecular weight of silylation agent. Novolak based polymer maintained superior silylation durability to polyvinyl phenolic (PVP) resin. New silylation process concept which is dual silylation method was developed to utilize PVP's merits in the silylation process against desilylation. Dry development lithography of i-line was feasible to practical application of prototype 256 mega bit DRAM which demands 0.30micrometers patterning with a reproducibility.

Paper Details

Date Published: 16 May 1994
PDF: 12 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175354
Show Author Affiliations
Seung-Chan Moon, Hyundai Semiconductor R&D Lab. (South Korea)
Hyeong-Soo Kim, Hyundai Semiconductor R&D Lab. (South Korea)
Chang-Moon Lim, Hyundai Semiconductor R&D Lab. (South Korea)
Tai-Kyung Won, Hyundai Semiconductor R&D Lab. (South Korea)
Soo-Han Choi, Hyundai Semiconductor R&D Lab. (South Korea)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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