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Proceedings Paper

Diffusion effects in chemically amplified deep-UV resists
Author(s): Marco Antonio Zuniga; Eric Tomacruz; Andrew R. Neureuther
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Paper Abstract

Evidence from simulation linewidth measurements is presented which suggests that a type II diffusion front is moving through positive tone t-BOC material during post exposure bake. A steady increase in linespace of 50 nm/min is observed in IBM APEX-E and even faster rates can be found in Apex-M. The converse is observed in negative resist systems, which evidence slower linewidth dependencies. The simultaneous reaction and 3D deprotection dependent diffusion simulation was carried out with a massively parallel approach. In addition, two-dimensional diffusion effects were studied with a test structure obtained with a super resolution phase shift mask.

Paper Details

Date Published: 16 May 1994
PDF: 9 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175349
Show Author Affiliations
Marco Antonio Zuniga, Univ. of California/Berkeley (United States)
Eric Tomacruz, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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