Share Email Print

Proceedings Paper

Diffusion effects in chemically amplified deep-UV resists
Author(s): Marco Antonio Zuniga; Eric Tomacruz; Andrew R. Neureuther
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Evidence from simulation linewidth measurements is presented which suggests that a type II diffusion front is moving through positive tone t-BOC material during post exposure bake. A steady increase in linespace of 50 nm/min is observed in IBM APEX-E and even faster rates can be found in Apex-M. The converse is observed in negative resist systems, which evidence slower linewidth dependencies. The simultaneous reaction and 3D deprotection dependent diffusion simulation was carried out with a massively parallel approach. In addition, two-dimensional diffusion effects were studied with a test structure obtained with a super resolution phase shift mask.

Paper Details

Date Published: 16 May 1994
PDF: 9 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175349
Show Author Affiliations
Marco Antonio Zuniga, Univ. of California/Berkeley (United States)
Eric Tomacruz, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

© SPIE. Terms of Use
Back to Top