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Proceedings Paper

I-line negative resist (INR): a negative-tone I-line chemically amplified photoresist
Author(s): Leo L. Linehan; Gary T. Spinillo; Randolph S. Smith; Wayne M. Moreau; Barry C. McCormick; Robert L. Wood; Erik A. Puttlitz; James P. Collins; William J. Miller
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Paper Abstract

INR, an I-line negative photoresist, is described. Acid catalyzed cross-linking of phenolic resins using a non-metallic photoacid generator, 2,6-bishydroxymethyl-p-cresol as a cross- linker, and 9-anthracene methanol as an I-line sensitizer results in a very high photospeed aqueous TMAH developable photoresist. Poly(p-hydroxystyrene) was found to have advantages over novolac resins for formulation of high performance negative I-line photoresist. Advantages obtained by using PHS rather than novolac include higher thermal stability, elimination of undercut on nuleophilic surfaces and compatibility with 2.38 percent TMAH puddle develop processes. A high resolution version, INR-X, is described. Resolution to 0.30 micrometers and linearity to 0.35 micrometers was obtained using a 0.54NA ASML I-line stepper. 0.35 micrometers line-spaces arrays had 1.2 micrometers depth of focus and 0.40 micrometers line-space arrays had a depth of focus greater than 1.6 micrometers . An unusual characteristic found in INR-X is a very low sensitivity to variation in PEB temperature. A 3nm/ degree(s)C line-width dependency was found.

Paper Details

Date Published: 16 May 1994
PDF: 13 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175347
Show Author Affiliations
Leo L. Linehan, IBM Microelectronics (United States)
Gary T. Spinillo, IBM Microelectronics (United States)
Randolph S. Smith, IBM Microelectronics (United States)
Wayne M. Moreau, IBM Microelectronics (United States)
Barry C. McCormick, IBM Microelectronics (United States)
Robert L. Wood, IBM Microelectronics (United States)
Erik A. Puttlitz, IBM Microelectronics (United States)
James P. Collins, IBM Microelectronics (United States)
William J. Miller, IBM Microelectronics (United States)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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