Share Email Print
cover

Proceedings Paper

Dialkyl fumarate copolymers: new photoresist materials for deep- and mid-UV microlithography
Author(s): Graham D. Darling; Chun Hao Zhang; Alexander M. Vekselman
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Photopatterning is described using chemically amplified resists formulated from the copolymer of di-t-butyl fumarate and styrene with various acid-photogenerators. Exposure of the materials to deep- and mid-UV light followed by postbaking results in significant changes in solubility and polarity due to carboxylic functions produced on the polymer chain through the action of photogenerated acid catalyst (chemical amplification). As resists, they possess good sensitivity (14-40 mJ/cm2), contrast ((gamma) >4) and thermostability (up to 300 degree(s) C). Relief images with good resolution can be readily obtained with either aqueous base (positive-tone) or organic (negative-tone) solvents as developer. Such photoinduced changes of the functional groups in the exposed areas were also used to pattern molecules on the surface at micron-scale, thus generating functional images, as illustrated by the selective binding of fluorescent dyes in either exposed (positive-tone) or unexposed (negative-tone) areas.

Paper Details

Date Published: 16 May 1994
PDF: 12 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175345
Show Author Affiliations
Graham D. Darling, McGill Univ. (Canada)
Chun Hao Zhang, McGill Univ. (Canada)
Alexander M. Vekselman, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

© SPIE. Terms of Use
Back to Top