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Proceedings Paper

Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures
Author(s): Regine G. Tarascon-Auriol; Anthony E. Novembre; Woon Wai Tai; Linus A. Fetter; Janet M. Kometani; Omkaram Nalamasu
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Paper Abstract

The electron-beam lithographic response of CAMP6 is evaluated and compared to the characteristics of the chemically amplified resist under deep UV exposure. The optimization of the electron- beam lithographic properties of the positive deep UV resist CAMP6 has been performed by evaluating the effects of prebake temperature (ranging from 115 to 140 degree(s)C) and post-exposure bake temperature (ranging from 115 to 150 degree(s)C) on the observed resist thickness loss and percent of t-BOC group deprotection as measured by IR spectroscopy.

Paper Details

Date Published: 16 May 1994
PDF: 11 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175343
Show Author Affiliations
Regine G. Tarascon-Auriol, AT&T Bell Labs. (United States)
Anthony E. Novembre, AT&T Bell Labs. (United States)
Woon Wai Tai, AT&T Bell Labs. (United States)
Linus A. Fetter, AT&T Bell Labs. (United States)
Janet M. Kometani, AT&T Bell Labs. (United States)
Omkaram Nalamasu, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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