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Proceedings Paper

Deep-UV resists based on methacrylamide copolymers
Author(s): Carlo Mertesdorf; Bertholt Nathal; Norbert Muenzel; Heinz E. Holzwarth; Hans-Thomas Schacht
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Paper Abstract

The present paper describes chemically amplified positive tone Deep-UV resists based on N-hydroxybenzyl methacrylamide (HBMAA) copolymers. HBMAA's were found to be attractive comonomers, due to their facile synthesis and their beneficial impact on the physical properties of the copolymers and the photoresists prepared from them. For example, good adhesion was provided to the silicon substrate and high glass transition temperatures were achieved which confer an appreciable thermal flow stability to the resist. HBMAA/4-tetrahydropyranyl vinyl phenol/methacrylic acid terpolymers were synthesized by radical polymerization which proceeds in a statistical manner. This allows for the monomers to be combined in the appropriate ratios, thus, tailoring the polymer properties, such as the glass transition and the dissolution rate. Two and three component resist formulations based on these terpolymrs exhibit linear resolution to 0.35 micrometers (NA 0.37). Thermal flow stability of the resists exceeded 130 degree(s)C. No auto decomposition was observed. Resists were applied without top coat and have a post exposure delay latitude of more than one hour.

Paper Details

Date Published: 16 May 1994
PDF: 12 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175342
Show Author Affiliations
Carlo Mertesdorf, OCG Microelectronic Materials AG (Switzerland)
Bertholt Nathal, OCG Microelectronic Materials AG (Switzerland)
Norbert Muenzel, OCG Microelectronic Materials AG (Switzerland)
Heinz E. Holzwarth, OCG Microelectronic Materials AG (Switzerland)
Hans-Thomas Schacht, OCG Microelectronic Materials AG (Switzerland)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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