Share Email Print

Proceedings Paper

Investigation of onium salt type photoacid generators in positive DUV resist systems
Author(s): Michael Francis Cronin; Timothy G. Adams; Theodore H. Fedynyshyn; Jacque H. Georger; J. Michael Mori; Roger F. Sinta; James W. Thackeray
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The effect of onium salt structure in partially blocked poly(p- vinyl)phenol/photoacid generator (PAG) resist matrices on resolution, inhibition, and postexposure delay stability is reported. The PAG structure, M+X-, was varied such that M+ was either triphenyl sulfonium (TPS+) or diphenyl iodonium (DPI+), and X- represented trifluoromethanesulfonate (TFA-) toluenesulfonate (TSA-), camphorsulfonate (CSA-), and hexadecylsulfonate (HDSA-). The relative photospeed of these resists corresponded to the relative pKa of the acid generated from the anoin, TFA>TSA>HDSA>CSA. The resolution of the resists using TPS+ were better than that of the DPI+-based resists. The best PAG from a resolution standpoint was triphenylsulfonium tosylate. The TPS+TSA- also showed the lowest measured diffusion coefficient, D equals 1.1 X 10$=-4) micrometers 2/s. However, variation in PAG structure did not show any advantage in postexposure delay stability, with all the resists studied showing either 't-top' or scumming as failure modes. The larger acids, CSA and HDSA, showed a greater tendency to scum over a one hour delay period, which may indicate less acid evaporation, and more lateral diffusion to unexposed areas. The smaller acids, TSA and TFA, both showed strong 't-top' formation which is due to their increased acid volatility.

Paper Details

Date Published: 16 May 1994
PDF: 11 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175339
Show Author Affiliations
Michael Francis Cronin, Shipley Co., Inc. (United States)
Timothy G. Adams, Shipley Co., Inc. (United States)
Theodore H. Fedynyshyn, Shipley Co., Inc. (United States)
Jacque H. Georger, Shipley Co., Inc. (United States)
J. Michael Mori, Shipley Co., Inc. (United States)
Roger F. Sinta, Shipley Co., Inc. (United States)
James W. Thackeray, Shipley Co., Inc. (United States)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

© SPIE. Terms of Use
Back to Top