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Proceedings Paper

Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2
Author(s): Reinhold Schwalm; H. Binder; Thomas Fischer; Dirk J. H. Funhoff; Anne-Marie Goethals; Andreas Grassmann; Holger Moritz; Patrick Jean Paniez; Marijan E. Reuhman-Huisken; Francoise Vinet; Han J. Dijkstra; A. Krause
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Paper Abstract

By optimization of SUCCESS ST2 an environmentally stable and robust deep UV positive resist has been derived where the generally encountered problems related to chemical amplification resists, the formation of T-tops and linewidth changes during delay have been solved. The previously reported chemistry, protected poly-p-hydroxystyrene and SUCCESS type sulfonium salts, has been proven to be insensitive to airborne contaminations. In this paper the optimization of processing conditions, based on thermal analysis is reported. With the derived conditions linewidth changes during delays could be minimized and excellent performance obtained. At the IBM lithography test center in Boblingen an integrated photosector, consisting of equipment, materials, process and control philosophy, was balanced and 0.25 micrometers pattern can routinely be resolved using an ASM-L DUV stepper (NA 0.5).

Paper Details

Date Published: 16 May 1994
PDF: 12 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175338
Show Author Affiliations
Reinhold Schwalm, BASF AG (Germany)
H. Binder, BASF AG (Germany)
Thomas Fischer, IBM Deutschland GmbH (Germany)
Dirk J. H. Funhoff, BASF AG (Germany)
Anne-Marie Goethals, IMEC (Belgium)
Andreas Grassmann, IBM Deutschland GmbH (Germany)
Holger Moritz, IBM Deutschland GmbH (Germany)
Patrick Jean Paniez, CNET-CNS (France)
Marijan E. Reuhman-Huisken, ASM Lithography BV (Netherlands)
Francoise Vinet, LETI/CEA (France)
Han J. Dijkstra, Philips Research Labs. (Netherlands)
A. Krause, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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