Share Email Print

Proceedings Paper

Quantum chemical studies of chemically amplified resist materials for electron-beam and ArF excimer laser
Author(s): Tohru Ushirogouchi; Naoko Kihara; Satoshi Saito; Takuya Naito; Koji Asakawa; Tsukasa Tada; Makoto Nakase
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Quantum chemical calculation is applied to investigate the reaction mechanism of sulfonyl acid generator and the transparency of the resist material. We have found that electron absorbed dimethylsulfone can be easily decomposed by relatively low energy (2.95 Kcal/mol), reaching to the decomposed status of methyl radical and methyl sulfonyl anion. This was thought to be an initial step in the electron acid generation reaction of the sulfonyl compounds. The total molecular energy of dimethyl sulfone anion was found to be higher than that of the neutral dimethylsulfone. On the other hand, sulfone derivatives with electron-withdrawing groups, such as methyl sulfonyl acetonitrile, usually have higher energy (about 41 kcal/mol) than those for their anion. This suggests that the electron withdrawing groups enhance the electron affinity of the sulfone compounds, which are also considered to increase the efficiency of acid generation. Additionally, another quantum chemical study was carried out in order to improve transparency of the aromatic species in resist for ArF excimer laser. Using configuration interaction (CI) methods of molecular orbital theory, the substituent effects of UV absorption in the aromatic compounds were investigated. As a result, significant red sifts in Amax were observed in the conjugated aromatic rings, which increases the transparency at 193 nm wavelength region.

Paper Details

Date Published: 16 May 1994
PDF: 9 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175337
Show Author Affiliations
Tohru Ushirogouchi, Toshiba Corp. (Japan)
Naoko Kihara, Toshiba Corp. (Japan)
Satoshi Saito, Toshiba Corp. (Japan)
Takuya Naito, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Tsukasa Tada, Toshiba Corp. (Japan)
Makoto Nakase, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

© SPIE. Terms of Use
Back to Top