Share Email Print
cover

Proceedings Paper

Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist
Author(s): Kaichiro Nakano; Katsumi Maeda; Shigeyuki Iwasa; Jun-ichi Yano; Yukio Ogura; Etsuo Hasegawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A novel photoacid generator, ALS (alkylsulfonium salt; cyclohexylmethyl(2-oxocyclohexyl)sulfonium trifluoromethane- sulfonate) for ArF excimer laser ((lambda) equals193 nm) lithography and a single-layer resist have been developed. ALS shows high transparency at 193 nm and photoacid generating capability on irradiation by ArF excimer laser. A novel methacrylate terpolymer, poly(tricyclo[5.2.1.02,6]decanylmethacrylate-co-2- tetrahydropyranylmethacrylate-co-methacrylic acid), is synthesized as a base resin. The resist, consisting of ALS and the polymer, shows chemical amplification and good resolution. A 0.2-micrometers line and space negative-tone image is observed at 15 mJ/cm2 dose using an ArF excimer laser.

Paper Details

Date Published: 16 May 1994
PDF: 11 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175336
Show Author Affiliations
Kaichiro Nakano, NEC Corp. (Japan)
Katsumi Maeda, NEC Corp. (Japan)
Shigeyuki Iwasa, NEC Corp. (Japan)
Jun-ichi Yano, NEC Corp. (Japan)
Yukio Ogura, NEC Corp. (Japan)
Etsuo Hasegawa, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

© SPIE. Terms of Use
Back to Top