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Proceedings Paper

Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction
Author(s): Takumi Ueno; Shou-ichi Uchino; Keiko T. Hattori; Toshihiko Onozuka; Seiichiro Shirai; Noboru Moriuchi; Michiaki Hashimoto; S. Koibuchi
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Paper Abstract

Chemical amplification negative resist system composed of a novolak resin, a carbinol and an acid generator is investigated for i-line phase-shift lithography. The reaction in this resist is based on an acid-catalyzed intramolecular dehydration reaction. The dehydration products act as aqueous-base dissolution inhibitors, and carbinol compounds in unexposed areas work as dissolution promoters. The resist composed of a novolak resin, 1,4-bis((alpha) -hydroxyisopropyl) benzene (DIOL-1) and 2- naphthoylmethyltetramethylenesulfonium triflate (PAG-2) gives the best lithographic performance in terms of sensitivity and resolution. Line-and-space patterns of 0.275 micrometers are obtained using an i-line stepper (NA:0.45) in conjunction with a phase shifting mask.

Paper Details

Date Published: 16 May 1994
PDF: 9 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175334
Show Author Affiliations
Takumi Ueno, Hitachi, Ltd. (Japan)
Shou-ichi Uchino, Hitachi, Ltd. (Japan)
Keiko T. Hattori, Hitachi, Ltd. (Japan)
Toshihiko Onozuka, Hitachi, Ltd. (Japan)
Seiichiro Shirai, Hitachi, Ltd. (Japan)
Noboru Moriuchi, Hitachi, Ltd. (Japan)
Michiaki Hashimoto, Hitachi Chemical Co., Ltd. (Japan)
S. Koibuchi, Hitachi Chemical Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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