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Proceedings Paper

Dissolution characteristics optimization for chemically amplified positive resist
Author(s): Toshiro Itani; Haruo Iwasaki; Masashi Fujimoto; Kunihiko Kasama
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Paper Abstract

Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, benzenesulfonic acid derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.

Paper Details

Date Published: 16 May 1994
PDF: 11 pages
Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175330
Show Author Affiliations
Toshiro Itani, NEC Corp. (Japan)
Haruo Iwasaki, NEC Corp. (Japan)
Masashi Fujimoto, NEC Corp. (Japan)
Kunihiko Kasama, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2195:
Advances in Resist Technology and Processing XI
Omkaram Nalamasu, Editor(s)

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