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Proceedings Paper

Fluorescent light source (FLS) with low-temperature poly-Si TFT driver
Author(s): Ken-ichi Nakamura; Hideki Asada; Toshiyuki Akiyama; Kenji Sera; Hiroshi Tanabe; Fujio Okumura; Ken Ito; Hiroyuki Nakajima; Hiroshi Saeki
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Paper Abstract

A fluorescent light source (FLS) addressed by a CMOS polysilicon thin-film transistor (poly-Si TFT) driver has been fabricated for the first time. The FLS has 800 pixels with a 200 dpi resolution. 5000 fL brightness has been achieved with only 40 V driving voltage because of driving each pixel in static mode. The FLS feasibility has been confirmed by a print head utilized the FLS. The poly-Si TFT driver has been fabricated by a low-temperature process under 600 degree(s)C, utilizing excimer-laser annealing. This enables the use of low-cost glass substrates and allows integrating the driver within the FLS. Therefore, this technology presents compact and low-cost print heads.

Paper Details

Date Published: 9 May 1994
PDF: 8 pages
Proc. SPIE 2171, Color Hard Copy and Graphic Arts III, (9 May 1994); doi: 10.1117/12.175290
Show Author Affiliations
Ken-ichi Nakamura, NEC Corp. (Japan)
Hideki Asada, NEC Corp. (Japan)
Toshiyuki Akiyama, NEC Corp. (Japan)
Kenji Sera, NEC Corp. (Japan)
Hiroshi Tanabe, NEC Corp. (Japan)
Fujio Okumura, NEC Corp. (Japan)
Ken Ito, NEC Kagoshima Ltd. (Japan)
Hiroyuki Nakajima, NEC Kagoshima Ltd. (Japan)
Hiroshi Saeki, NEC Kagoshima Ltd. (Japan)

Published in SPIE Proceedings Vol. 2171:
Color Hard Copy and Graphic Arts III
Jan Bares, Editor(s)

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