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Proceedings Paper

Performance simulations of p-i-n and MSM detectors
Author(s): Christophe P. Kocot; Joseph Straznicky; Tun S. Tan; Ronald T. Kaneshiro
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Paper Abstract

We propose a model for III-V compound PIN and MSM detectors which is both physically realistic and easily modifiable. The complete model consists of two components: the physical and circuit model. In the physical model an intrinsic device is simulated by solving Poisson's equation, the current continuity equations, and a rate equation for charged traps using MATHEMATICA. Carrier injection, charge-storage effects and fringing electric fields are also taken into account. The results can be presented either in the time or the frequency domain. These results are used to determine the parameters of a circuit model for an intrinsic device. Our circuit model was specifically designed to include all the above mentioned effects. The model was tested by simulating the performance of PIN detectors with various geometries in both SPICE and MDS. Agreement between the measured data and the simulated results was remarkable good.

Paper Details

Date Published: 2 May 1994
PDF: 11 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175278
Show Author Affiliations
Christophe P. Kocot, Hewlett-Packard Labs. (United States)
Joseph Straznicky, Hewlett-Packard Labs. (United States)
Tun S. Tan, Hewlett-Packard Labs. (United States)
Ronald T. Kaneshiro, Hewlett-Packard Labs. (United States)


Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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