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Proceedings Paper

Picosecond characteristics of silicon-on-insulator metal-semiconductor-metal photodiodes
Author(s): Chia-Chi Wang; Sotiris Alexandrou; Douglas Jacobs-Perkins; Thomas Y. Hsiang
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Paper Abstract

A subpicosecond electro-optic sampling system was used to measure the picosecond characteristics of silicon-based, metal- semiconductor-metal photodiodes made on both bulk-silicon and silicon-on-sapphire (SOS) substrates with submicrometer finger spacings and widths. The temporal response of bulk-silicon diodes was strongly dependent on the wavelength of excitation light because of the effect of different penetration depths. On the other hand, for the SOS diodes, the device speed is nearly independent of wavelength since the thickness of the silicon layer limits the depth of photogenerated carriers. The external quantum efficiency of SOS diodes was measured at several selected wavelengths and shown to be dominated by the photon absorption coefficient.

Paper Details

Date Published: 2 May 1994
PDF: 5 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175267
Show Author Affiliations
Chia-Chi Wang, Univ. of Rochester (United States)
Sotiris Alexandrou, Univ. of Rochester (United States)
Douglas Jacobs-Perkins, Univ. of Rochester (United States)
Thomas Y. Hsiang, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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