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Proceedings Paper

Er-doped silicate glass films prepared by co-sputtering for optical amplifiers
Author(s): Hong Koo Kim; Ching-Chung Li; Xiao Ming Fang; Gerald Nykolak; Philippe C. Becker
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Paper Abstract

Er-doped glass thin films are drawing increasing attention for optical amplifiers suitable for integrated optic configuration. We have investigated deposition of highly Er-doped (mid 1019 atoms/cm3 silica films using Rf magnetron sputtering. Erbium was doped into the host material by cosputtering techniques. Deposited films (0.5 to 1.2-micrometers thick) were characterized by photoluminescence, secondary ion mass spectroscopy, and fluorescence decay measurements. We have also deposited Er-doped three component silicate glass (SiO2 + Al2O3 + MgO) films to investigate the dependence of Er3+ luminescence on the host material's composition. Optimum anneal temperature for the silicate glass films was found to be lower than that for the silica films while the Er3+ luminescence intensity was slightly higher for the silicate glass case.

Paper Details

Date Published: 2 May 1994
PDF: 10 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175265
Show Author Affiliations
Hong Koo Kim, Univ. of Pittsburgh (United States)
Ching-Chung Li, Univ. of Pittsburgh (United States)
Xiao Ming Fang, Univ. of Pittsburgh (United States)
Gerald Nykolak, AT&T Bell Labs. (United States)
Philippe C. Becker, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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