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Proceedings Paper

Photoconductive and photovoltaic ultraviolet sensors based on GaN
Author(s): Mohamed Asif Khan; D. T. Olson; Amal R. Bhattarai; Jonathon Norbert Kuznia; S. Krishnankutty
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Paper Abstract

We have fabricated photoconductive and photovoltaic ultraviolet sensors from GaN single layers and pn-junctions. These sensors exhibit a sharp long wavelength cut-off in responsivity at the bandgap (365 nm). The active layers (GaN) were deposited using low pressure MOCVD. The p-type doping was accomplished using Mg as the dopant. Photoconductive, and schottky barrier detectors were then fabricated using photolithography, reactive ion etching and contact metallizations. These processing techniques were developed specific to the A1xGa1-xN material system. We will discuss growth, fabrication and characterization details for these various device types. The measured values of device parameters will be contrasted with those estimated from active layer material characterization.

Paper Details

Date Published: 2 May 1994
PDF: 4 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175263
Show Author Affiliations
Mohamed Asif Khan, APA Optics, Inc. (United States)
D. T. Olson, APA Optics, Inc. (United States)
Amal R. Bhattarai, APA Optics, Inc. (United States)
Jonathon Norbert Kuznia, APA Optics, Inc. (United States)
S. Krishnankutty, APA Optics, Inc. (United States)


Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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