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Proceedings Paper

Integral Gummel relation for single- and double-heterojunction graded-base HBTs
Author(s): J. S. Yuan
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Paper Abstract

Integral Gummel charge-control relation for both linearly graded- and non-graded-base and for single or double-heterojunction bipolar transistors has been derived. In addition to modeling the collector current density for different heterojunction biopolar transistor with and without graded energy gap in the base. Comparisons with numerical and experimental data show excellent agreement.

Paper Details

Date Published: 2 May 1994
PDF: 10 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175262
Show Author Affiliations
J. S. Yuan, Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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