Share Email Print
cover

Proceedings Paper

Thermal and reverse base current effects on heterojunction bipolar transistors and circuits
Author(s): J. S. Yuan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon model derived from silicon bipolar transistor is able to predict the base and collector currents of the HBT with good accuracy for negligible self- heating. The present model extends the Gummel-Poon model equations to account for self-heating using a nonlinear thermal resistance. The present model also accounts for base current reversal due to impact ionization in the collector-base depletion region. Effects of self-heating on the performance of analog circuits such as current mirrors and small-signal amplifiers are evaluated.

Paper Details

Date Published: 2 May 1994
PDF: 11 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175253
Show Author Affiliations
J. S. Yuan, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

© SPIE. Terms of Use
Back to Top