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Proceedings Paper

Microscopic electric field measurement for microwave high-power FETs by using a noncontact electro-optic probing technique
Author(s): Akira Inoue; Tomohiro Ishikawa; S. Chaki; S. Orisaka; Shin-Ichiro Aoshima; Hironori Takahashi
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Paper Abstract

Direct observation of nonuniform operation in GaAs microwave high-power FETs has been realized by introducing a new electro- optic (E-O) probing system. In the system, ZnTe is used as a longitudinal external E-O crystal in order to make high sensitive measurement. The spatial resolution of the E-O probing system with an electrically synchronized laser diode is as small as 5 micrometers . We apply this system to the measurement of the electric field at the microscopic region of drain electrodes of an X-band 1W FET consisting of 10 FET unit cells (73 micrometers separation). The electric field concentration to the center (1.6 times) and the most outer cells (1.1 times) has directly been measured. The electric fields on the unbalanced FET cells which were damaged artificially by the focused ion beam are also reported.

Paper Details

Date Published: 2 May 1994
PDF: 8 pages
Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175249
Show Author Affiliations
Akira Inoue, Mitsubishi Electric Corp. (Japan)
Tomohiro Ishikawa, Mitsubishi Electric Corp. (Japan)
S. Chaki, Mitsubishi Electric Corp. (Japan)
S. Orisaka, Mitsubishi Electric Corp. (Japan)
Shin-Ichiro Aoshima, Hamamatsu Photonics KK (Japan)
Hironori Takahashi, Hamamatsu Photonics KK (Japan)

Published in SPIE Proceedings Vol. 2149:
Technologies for Optical Fiber Communications
Gail J. Brown; Susan R. Sloan; Kenneth D. Pedrotti; Didier J. Decoster; Didier J. Decoster; Joanne S. LaCourse; Yoon-Soo Park; Kenneth D. Pedrotti; Susan R. Sloan, Editor(s)

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