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Proceedings Paper

Evanescent field thin-film optical amplifier
Author(s): Valery A. Kozlov; Alexey S. Svakhin; Valerii V. Ter-Mikirtychev
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Paper Abstract

An evanescent field integrated optics amplifier for 1,07-1,34 μm spectral band have been proposed and demonstrated. The amplifier is a silicon oxide thin - film waveguide on an laser active LiF:F2- color center crystalline substrate. The measured gain was - 1 OdB for the mode propagating length 2 cm. Solid state integrated optics lasers and amplifiers, whose rapid development was inspired by successes in waveguide lasers and amplifiers, have several important features that can make them preferable in various applications. The possibility to incorporate these components into integrated optics circuits, developed technology for crystal growth and processing, simple pumping schemes (including by laser diodes), flexibility in using different active ions to achieve the desired goals make them attractive for many . researches. Currently these lasers/amplifiers are usually made by in-diffusion of active ions into crystalline materials and glasses, as well as by ion implantation and epitaxial growth 1. We propose a rather new concept of integrated optics amplifier, which employs a passive waveguide on a substrate of active material. When light propagates through the waveguide, part of it propagates in the substrate as an evanescent field. The portion is defined by the waveguide parameters, the wavelength and the mode index. Using a standard pumping scheme one can amplify the portion that propagates in the active substrate and, therefore, the entire mode. The advantage of this amplifier is relatively simple planar fabrication technology and the possibility to utilize various pumping sources and schemes.

Paper Details

Date Published: 2 May 1994
PDF: 3 pages
Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.175009
Show Author Affiliations
Valery A. Kozlov, General Physics Institute (United States)
Alexey S. Svakhin, General Physics Institute (Russia)
Valerii V. Ter-Mikirtychev, General Physics Institute (United States)


Published in SPIE Proceedings Vol. 2150:
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
Mario Nicola Armenise, Editor(s)

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