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Proceedings Paper

High-finesse silicon Fabry-Perot optical intensity modulator fabricated by merged epitaxial lateral overgrowth
Author(s): HanChieh Chao; Gerold W. Neudeck
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Paper Abstract

Merged ELO (MELO) technology, which is an extension of Selective Epitaxial Growth and Epitaxial Lateral Overgrowth (ELO), was used to develop the c-Si Fabry-Perot cavity fabrication which is compatible with the well developed conventional integrated circuit fabrication techniques. Increased finesse of the Fabry-Perot cavity was accomplished with multi-dielectric layers as high reflection mirrors. Polycrystalline silicon produced from amorphous Si (a-Si) and SiO2 were then chosen as the high and low index dielectric materials so that fewer number of dielectric pairs are needed to obtain a high reflectance. An optical intensity modulator using MELO technique, was fabricated and evaluated. The maximum modulation depth was measured to be 40% under an injection current density of 16 A/cm2. The current density can be made at even lower if the finesse (calculated to be 19.26) of the cavity is further increased. The measured value was 6.8 but if measured with Fourier transform IR spectrometers or by using laser as the lightsource, it could be larger.

Paper Details

Date Published: 2 May 1994
PDF: 9 pages
Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.174990
Show Author Affiliations
HanChieh Chao, Purdue Univ. (Taiwan)
Gerold W. Neudeck, Purdue Univ. (United States)

Published in SPIE Proceedings Vol. 2150:
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
Mario Nicola Armenise, Editor(s)

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