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Proceedings Paper

Surface flashover sensitivity of silicon in vacuum
Author(s): Gheorghe Gradinaru; G. Korony; Tangali S. Sudarshan
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Paper Abstract

The high flashover sensitivity of high resistivity silicon in vacuum is discussed. Surface flashover fields of 5 - 30 kV/cm are common in silicon-vacuum systems, even though the intrinsic critical fields of silicon and vacuum are > 300 kV/cm. The influences of the material (bulk quality and surface processing), contact technology, contact geometry and electrode configuration on the preflashover and surface flashover characteristics of wafer samples in vacuum are analyzed.

Paper Details

Date Published: 1 May 1994
PDF: 4 pages
Proc. SPIE 2259, XVI International Symposium on Discharges and Electrical Insulation in Vacuum, (1 May 1994); doi: 10.1117/12.174671
Show Author Affiliations
Gheorghe Gradinaru, Univ. of South Carolina (United States)
G. Korony, Univ. of South Carolina (United States)
Tangali S. Sudarshan, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 2259:
XVI International Symposium on Discharges and Electrical Insulation in Vacuum
Gennady A. Mesyats, Editor(s)

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