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Proceedings Paper

Semiconductor lasers with dry-etched facets
Author(s): Szutsun Simon Ou; Jane J. Yang; Michael Jansen
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Paper Abstract

Semiconductor lasers with dry etched facets are of interest for monolithic 2-D coherent applications such as optical interconnects and optoelectronic integrated circuits. This paper reports recent development on this area including high-performance 3 X 3 individually addressable InGaAs/GaAs single-mode surface emitting laser diodes, 630 nm GaInP/GaAlInP surface-emitting laser diodes, and 1.3 micrometers InGaAsP/InP surface-emitting laser diodes grown on Si substrate.

Paper Details

Date Published: 2 May 1994
PDF: 10 pages
Proc. SPIE 2153, Optoelectronic Interconnects II, (2 May 1994); doi: 10.1117/12.174505
Show Author Affiliations
Szutsun Simon Ou, APT (United States)
Jane J. Yang, APT (United States)
Michael Jansen, APT (United States)

Published in SPIE Proceedings Vol. 2153:
Optoelectronic Interconnects II
Ray T. Chen; John A. Neff, Editor(s)

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