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Proceedings Paper

Enhanced precision CD measurements via topographic modeling
Author(s): Alexander Henstra; James J. Jackman
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Paper Abstract

To evaluate the rigorousness of existing algorithms for critical dimension (CD) linewidth measurements in the SEM, a Monte Carlo program was developed to model the topographic signal of line-and-space patterns for both backscattered and secondary electrons. The line cross-section is assumed to be a perfect trapezoid. In this paper we present the results of the modeling of submicron photoresist lines on a silicon substrate for primary beam energies <EQ 1 keV and for various slope angles, pitches, and beam sizes. The simulated profiles are used to quantify the systematic errors introduced by commonly used linewidth measuring algorithms. The simulated secondary electron profiles are compared with reality by recording top-view and cross-section SEM images of submicron resist lines on Si. For comparison reasons only, we also recorded the same images after gold-coating the specimen, thus eliminating charging effects. The experimental profiles are very similar to the simulated profiles, but the geometrical imperfectness of the resist lines inhibits a quantitative comparison.

Paper Details

Date Published: 1 May 1994
PDF: 12 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174168
Show Author Affiliations
Alexander Henstra, Philips Research Labs. (Netherlands)
James J. Jackman, Philips Electron Optics (United States)


Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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