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Proceedings Paper

AFM application on the topography study of stack cell DRAM processes
Author(s): Daniel Hao-Tien Lee; Gwo-Yuh Shiau
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Paper Abstract

The stacked cell design of DRAM processes for lithography considerations has suffered severe topography step-height and unsmooth surface issues. In addition, the stability and uniformity control of thin film processes on the backend process can affect lithography process to a great extent. In this study, the AFM (atomic force microscope) has been used to study topography issues of a typical DRAM process. The detailed information concerning the topography step- height, flow angle, local unsmooth surface, etc., have been clearly identified. These studies provide useful information for future process development and improvement.

Paper Details

Date Published: 1 May 1994
PDF: 8 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174163
Show Author Affiliations
Daniel Hao-Tien Lee, Industrial Technology Research Institute (Taiwan)
Gwo-Yuh Shiau, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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