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Proceedings Paper

Use of scatterometric latent-image detector in closed-loop feedback control of linewidth
Author(s): John L. Sturtevant; Steven J. Holmes; Theodore G. Van Kessel; Michael L. Miller; Duncan A. Mellichamp
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Paper Abstract

The use of a diffraction-based latent image detector during the post-exposure bake (PEB) step for a chemically amplified resist system was investigated and its use in a feedback control strategy was examined. A calibration between intensity of light diffracted from the wafers during PEB and the final post-develop linewidth was determined. Using this relationship, two feedback control strategies were tested. One method altered the PEB time to compensate for unmeasured process disturbances and drive the linewidth to its target. The other method involved altering of the develop time. We found that using the post-exposure bake monitor in a feedback control system can improve wafer-to-wafer and lot-to-lot variability to below that which has been possible through conventional SEM measurements.

Paper Details

Date Published: 1 May 1994
PDF: 8 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174162
Show Author Affiliations
John L. Sturtevant, IBM Micoelectronics (United States)
Steven J. Holmes, IBM Microelectronics (United States)
Theodore G. Van Kessel, IBM Thomas J. Watson Research Ctr. (United States)
Michael L. Miller, Univ. of California/Santa Barbara (United States)
Duncan A. Mellichamp, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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