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Proceedings Paper

Process control for 0.25 um GaAs microwave monolithic integrated circuits
Author(s): Rick D. Hudgens; Shirley Meyers; Bret A. Small; Keith Salzman; David Rhine; Randy Class
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Paper Abstract

Gallium arsenide metal semiconductor field effect transistors (GaAs MESFETs) are used in analog microwave monolithic integrated circuits (MMICs) because of their high frequency response. Common applications for MMICs include low noise and power amplifiers for use in satellite communication and missile guidance systems. The performance of MESFETs is improved with smaller gate lengths, but to consistently achieve the highest performance, control methods must be in place for the critical processes. Gate length control is the key parameter in maintaining the rf performance and a lack of gate pinch off is the major yield loss category. This paper describes the process and the tools that Texas Instruments uses to monitor the critical parameters. It also describes the control methods and reviews the major contributors to variations in the process.

Paper Details

Date Published: 1 May 1994
PDF: 5 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174130
Show Author Affiliations
Rick D. Hudgens, Texas Instruments Inc. (United States)
Shirley Meyers, Texas Instruments Inc. (United States)
Bret A. Small, Texas Instruments Inc. (United States)
Keith Salzman, Texas Instruments Inc. (United States)
David Rhine, Texas Instruments Inc. (United States)
Randy Class, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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