Share Email Print
cover

Proceedings Paper

Quantitive analysis of the proximity effect in optical lithographic process
Author(s): Sang-Man Bae; Hung-Eil Kim; Young-Mog Ham; Seung-Chan Moon; Soo-Han Choi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

As the density of VLSI circuits increases, the proximity effect has been one of the critical issues in optical lithography. In general, the linewidth difference between dense and isolated patterns corresponds to 0.08 micrometers when a conventional i-line single resist process using a 0.54 NA is applied to the half-micron geometry on a flat wafer. Therefore, this linewidth difference has significantly affected the process stability in the real process applications. This paper describes the dependency of the proximity effects on the pattern size, line and space duty ratio, kinds of substrate film, defocus effect during exposure, and resist process conditions related to the variation of the resist thickness and develop time. Critical dimension (CD) deviation caused by the different latent image contrast is also experimentally monitored using two different photoresists. A simulation is performed for the purpose of obtaining the optimum resist thickness to reduce CD difference caused by the variations of resist thickness in the real topography.

Paper Details

Date Published: 1 May 1994
PDF: 13 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174128
Show Author Affiliations
Sang-Man Bae, Hyundai Electronics Semiconductor R&D Labs. (South Korea)
Hung-Eil Kim, Hyundai Electronics Semiconductor R&D Labs. (North Korea)
Young-Mog Ham, Hyundai Electronics Semiconductor R&D Labs. (South Korea)
Seung-Chan Moon, Hyundai Electronics Semiconductor R&D Lab. (South Korea)
Soo-Han Choi, Hyundai Electronics Semiconductor R&D Labs. (South Korea)


Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

© SPIE. Terms of Use
Back to Top