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Proceedings Paper

Low-loss electron imaging and its application to critical dimension metrology
Author(s): Kevin M. Monahan; M. Davidson; Zofia Grycz; Royce Krieger; B. Scheumaker; Robert Zmrzli
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Paper Abstract

Low-loss electron (LLE) imaging has been shown to have significant advantages over both secondary electron and conventional backscattered electron imaging for the purposes of inspection and critical dimension metrology of integrated circuits. LLE images had high- resolution, good atomic contrast and fewer charging artifacts. Further, they were easily optimized using Monte Carlo simulations; and the optimized LLE images showed excellent precision, accuracy, and linearity in both process control and focus-exposure applications.

Paper Details

Date Published: 1 May 1994
PDF: 7 pages
Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174122
Show Author Affiliations
Kevin M. Monahan, Metrologix Inc. (United States)
M. Davidson, Metrologix Inc. (United States)
Zofia Grycz, Metrologix Inc. (United States)
Royce Krieger, Metrologix Inc. (United States)
B. Scheumaker, Metrologix Inc. (United States)
Robert Zmrzli, Metrologix Inc. (United States)


Published in SPIE Proceedings Vol. 2196:
Integrated Circuit Metrology, Inspection, and Process Control VIII
Marylyn Hoy Bennett, Editor(s)

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