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Proceedings Paper

Progress in CMOS active pixel image sensors
Author(s): Sunetra K. Mendis; Sabrina E. Kemeny; Russell C. Gee; Bedabrata Pain; Quiesup Kim; Eric R. Fossum
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Paper Abstract

Recent research results regarding the investigation of CMOS active pixel image sensors (APS) are reported. An investigation of various designs for the pixel, including photogate devices of various geometries and photodiode devices, has been performed. Optoelectronic performance including intrapixel photoresponse maps taken using a focused laser scanning apparatus are presented. Several imaging arrays have also been investigated. A 128 X 128 image sensor has been fabricated and characterized. Both p-well and n-well implementations have been explored. The demonstrated arrays use 2 micrometers CMOS design rules and have a 40 X 40 micrometers pixel pitch. Typical design fill-factor is 26%. Output sensitivity is 3.7 (mu) V/e- for the p-well devices and 6.5 (mu) V/e- for the n-well devices. Read noise is less than 40 e- rms for the baseline designs. Dynamic range has been measured to be over 71 dB using a 5 V supply voltage. The arrays are random access with TTL control signals. Results regarding on-chip suppression of fixed pattern noise also are presented.

Paper Details

Date Published: 1 May 1994
PDF: 11 pages
Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); doi: 10.1117/12.172769
Show Author Affiliations
Sunetra K. Mendis, Jet Propulsion Lab. (United States)
Sabrina E. Kemeny, Jet Propulsion Lab. (United States)
Russell C. Gee, Jet Propulsion Lab. (United States)
Bedabrata Pain, Jet Propulsion Lab. (United States)
Quiesup Kim, Jet Propulsion Lab. (United States)
Eric R. Fossum, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 2172:
Charge-Coupled Devices and Solid State Optical Sensors IV
Morley M. Blouke, Editor(s)

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