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Proceedings Paper

AlGaInP single quantum well laser diodes
Author(s): David P. Bour; K. J. Beernink; David W. Treat; Randall S. Geels; David F. Welch
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Paper Abstract

The properties and low pressure organometallic vapor phase epitaxy of GaxIn1-xP/(AlGa)0.5In0.5P quantum well (QW) laser diode heterostructures with Al0.5In0.5P cladding layers, and having a wavelength of 614 < (lambda) < 690 nm, are described. At longer wavelengths ((lambda) > 660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result from a biaxially compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

Paper Details

Date Published: 1 June 1994
PDF: 12 pages
Proc. SPIE 2115, Visible and UV Lasers, (1 June 1994); doi: 10.1117/12.172748
Show Author Affiliations
David P. Bour, Xerox Palo Alto Research Ctr. (United States)
K. J. Beernink, Xerox Palo Alto Research Ctr. (United States)
David W. Treat, Xerox Palo Alto Research Ctr. (United States)
Randall S. Geels, Spectra Diode Labs., Inc. (United States)
David F. Welch, Spectra Diode Labs., Inc. (United States)


Published in SPIE Proceedings Vol. 2115:
Visible and UV Lasers
Richard Scheps, Editor(s)

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