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Proceedings Paper

Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers
Author(s): Randy L. Shimabukuro; Stephen D. Russell; Bruce W. Offord; Mark A. Handschy; Terry Stuart
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Paper Abstract

Single-crystal ultra-thin (< 100 nm) silicon on sapphire (UTSOS) has been fabricated using solid-phase epitaxy and regrowth techniques to produce a high quality semiconductor material on a transparent substrate ideal for active-matrix liquid crystal display (AMLCD) applications. MOS devices fabricated in this material have lower leakages, small thresholds, and higher transconductances than those fabricated in conventional unimproved SOS.

Paper Details

Date Published: 1 April 1994
PDF: 9 pages
Proc. SPIE 2174, Advanced Flat Panel Display Technologies, (1 April 1994); doi: 10.1117/12.172132
Show Author Affiliations
Randy L. Shimabukuro, Naval Command, Control and Ocean Surveillance Ctr. (United States)
Stephen D. Russell, Naval Command, Control and Ocean Surveillance Ctr. (United States)
Bruce W. Offord, Naval Command, Control and Ocean Surveillance Ctr. (United States)
Mark A. Handschy, Displaytech, Inc. (United States)
Terry Stuart, Displaytech, Inc. (United States)


Published in SPIE Proceedings Vol. 2174:
Advanced Flat Panel Display Technologies
Peter S. Friedman, Editor(s)

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