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Proceedings Paper

AIN on diamond thin films grown by chemical vapor deposition methods
Author(s): Anisul H. Khan; Jon M. Meese; Earl J. Charlson; Elaine M. Charlson; Tina Stacy; Salim A. Khasawinah; T. Sung; Galina Popovici; Mark A. Prelas; J. E. Chamberlain; Henry W. White
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Paper Abstract

Aluminum nitride (AlN) films were grown by chemical vapor deposition (CVD) on boron-doped diamond films deposited by the hot-filament CVD (HFCVD) method. The films were characterized by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy. The electrical characterization of the AlN/diamond interface was performed by current-voltage (I-V) and capacitance- voltage measurements. The resulting films showed one x-ray diffraction peak of (100) oriented AlN and three diamond diffraction peaks of (111), (220) and (331) orientation. The Raman spectra showed two peaks, one at 660 cm-1 due to scattering by the AlN lattice and the other at 1335 cm-1 by the diamond lattice. The I-V measurements on the metal(W)/diamond/Si/Al structure showed ohmic behavior from which the diamond film resistivity of 5 X 105 (Omega) -cm was estimated. The I-V measurements on the W/AlN/diamond/Si/Al structure showed rectifying behavior. The capacitance of the film was independent of the applied voltage and was dominated by the diamond bulk capacitance.

Paper Details

Date Published: 1 April 1994
PDF: 6 pages
Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171764
Show Author Affiliations
Anisul H. Khan, Univ. of Missouri/Columbia (United States)
Jon M. Meese, Univ. of Missouri/Columbia (United States)
Earl J. Charlson, Univ. of Missouri/Columbia (United States)
Elaine M. Charlson, Univ. of Missouri/Columbia (United States)
Tina Stacy, Univ. of Missouri/Columbia (United States)
Salim A. Khasawinah, Univ. of Missouri/Columbia (United States)
T. Sung, Univ. of Missouri/Columbia (United States)
Galina Popovici, Univ. of Missouri/Columbia (United States)
Mark A. Prelas, Univ. of Missouri/Columbia (United States)
J. E. Chamberlain, Univ. of Missouri/Columbia (United States)
Henry W. White, Univ. of Missouri/Columbia (United States)


Published in SPIE Proceedings Vol. 2151:
Diamond-Film Semiconductors
Mike A. Tamor; Mohammad Aslam, Editor(s)

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