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Proceedings Paper

Method of measuring doped-diamond-film thermal conductivity using infrared thermography
Author(s): Scott A. Herr; J. V. Beck; John J. McGrath; Sondes Sahli; Mohammad Aslam
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Paper Abstract

Experimental techniques were developed for the measurement of CVD doped-diamond film thermal conductivity. Three solutions were derived, one each for 1D, 2D, and radial heat flow. Parameters such as characteristic length, film resistivity and thickness were chosen from the model to reduce convective effects, obtain the desired temperature rise, and minimize the uncertainty in the estimation of the thermal conductivity. A diamond film specimen of doped and nondoped diamond layers deposited on a silicon substrate was designed and fabricated. A circular region was chemically etched from the substrate to expose a free-standing diamond diaphragm, 3 mm in diameter. An infrared imaging temperature acquisition system was implemented to improve spatial, temporal, and mechanical limitations posed by contact sensors. Preliminary results for the thermal conductivity were obtained using the method of least squares to minimize the error between the measured temperatures recorded by the infrared temperature acquisition system and the calculated temperatures determined by the optimal radial heat flow model. The thermal conductivity was determined to be 240 +/- 11 W/m K.

Paper Details

Date Published: 1 April 1994
PDF: 10 pages
Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171762
Show Author Affiliations
Scott A. Herr, Michigan State Univ. (United States)
J. V. Beck, Michigan State Univ. (United States)
John J. McGrath, Michigan State Univ. (United States)
Sondes Sahli, Michigan State Univ. (United States)
Mohammad Aslam, Michigan State Univ. (United States)


Published in SPIE Proceedings Vol. 2151:
Diamond-Film Semiconductors
Mike A. Tamor; Mohammad Aslam, Editor(s)

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